SX, Passive, 1GHz up to 20 GHz The SX family consists of three H-field probes and one E-field probe. The SX1 set (two H-field probes and one E-field probe) and the SX-R 20-1 set are available.
SX1 set, Near-Field Probes 1 GHz up to 10 GHz The SX1 set consists of three passive near-field probes for measuring E-fields and magnetic fields with a high clock frequency from 1 GHz to 10 GHz on electronic assemblies and ICs during the development stage. The different probe heads of the SX1 set allow for measurements very close to the electro…
SX-R 20-1 set, Near-Field Probe 1 GHz up to 20 GHz The SX-R 20-1 set consists of a passive near-field probe for the measurement of high-frequency magnetic fields up to 20 GHz during development. The probe head of the SX-R 20-1 allows measurements close to the electronic assembly, e.g. on individual IC pins, conductors, components and their connectio…
SX-R 3-1, H-Field Probe 1 GHz up to 10 GHz With its small probe head, the SX-R 3-1 can detect very high resolution RF-magnetic fields and can, therefore, identify even the smallest components as interference sources. Furthermore, the small probe head is designed to allow for measurements at less accessible areas, e.g. near IC pins.
SX-R 20-1, H-Field Probe 1 GHz up to 20 GHz The SX-R 20-1 is a passive H-field probe covering a frequency range up to 20 GHz. The probe head of the SX-R 20-1 is very compact. This allows the location of very small H-field sources, e.g. on traces, individual components or above an IC. It has a current attenuating sheath and is electrically shi…
SX-B 3-1, H-Field Probe 1 GHz up to 10 GHz The measurement coil of the SX-B 3-1 H-field probe is set at a 90° angle relative to the probe shaft. By positioning the probe head vertically, the measurement coil directly touches the surface of the printed circuit board. It is therefore possible to measure even hard to reach spots on the printed …
SX-E 03, E-Field Probe 1 GHz up to 10 GHz With 4x4 mm dimensions, the electrode on the underside of the probe head of the SX-E 03 is very compact. This allows for the localization of very small E-field sources, e.g. at conducting paths, single components, or on printed circuit boards.