RF Basic set Basic set of near-field probes 30 MHz to 3 GHz

The Basic set Near-Field Probes 30 MHz to 3 GHz includes six passive near-field probes for development-related measurements of electric and magnetic fields in the frequency range of 30 MHz to 3 GHz on electronic assemblies. The various probe heads of the set enable step-by-step localization of RF em…

RF1 set, Near-Field Probes 30 MHz up to 3 GHz The RF1 near-field probe set consists of four passive near-field probes for measuring E-fields and magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The different probe heads of the RF1 set allow for measurements very close to the electronic assemblies, e.g.… ** RF2 set, Near-Field Probes 30 MHz up to 3 GHz** The RF2 near-field probe set consists of four passive near-field probes for measuring magnetic fields from 30 MHz to 3 GHz on electronic assemblies during the development stage. The probe heads of the RF2 set allow for the step by step localization of RF magnetic-field interference sources on assemb…

RF3 mini set, Near-Field Probes 30 MHz up to 3 GHz The RF3 mini set consists of two passive near-field probes with a resolution under 1 millimeter for measuring magnetic fields between 30 MHz and 3 GHz on electronic assemblies during the development stage. The probes have special miniature heads which are designed for detailed measurements of magnet…

RF4-E set, Near-Field Probes E-field 30 MHz up to 3 GHz The RF4-E probe set contains two passive E field probes to measure electrical fields with a frequency range from 30 MHz up to 3 GHz for comparison purposes. The probes are designed for the analysis of E field distributions, detection of coupling mechanisms on modules and evaluation of switching edg…

RF-R 400-1, H-Field Probe 30 MHz up to 3 GHz Due to its large diameter (25 mm) the RF-R 400-1 H-field probe is highly sensitive and is suitable for measurements at distances up to 10 cm around assemblies and devices.

RF-R 50-1, H-Field Probe 30 MHz up to 3 GHz The RF-R 50-1 H-field probe is designed for measurements at assemblies, devices, or cables at distances up to approx. 3 cm. The H-field probe can identify larger components as interference sources.

RF-R 3-2, H-Field Probe 30 MHz up to 3 GHz The RF-R 3-2 near-field probe is used for the high-resolution measurement of RF magnetic fields directly on an assembly e.g. in range around pins and IC cases, conducting paths, decoupling capacitor and EMC components.

RF-R 0.3-3, H-Field Probe mini 30 MHz up to 3 GHz With its small probe head, the RF-R 0.3-3 can measure magnetic fields in very high resolution. Thus even smallest components can be detected as interference sources. Furthermore, the small probe head is suitable for measurements at hard to reach spots, e.g. near IC pins.

RF-B 50-1, H-Field Probe 30 MHz up to 3 GHz The H-field probe RF-B 50-1 was developed for the Langer scanner and is used for the extremely small-scale detection of magnetic field lines entering the probe tip orthogonally. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly.

RF-B 3-2, H-Field Probe 30 MHz up to 3 GHz The measurement coil of the RF-B 3-2 H-field probe is set at a 90° angle to the probe shaft. By positioning the probe head vertically, the measurement coil touches the surface of the printed circuit board directly. This allows for use at places on the surface of printed circuit boards, which are typ…

RF-B 0.3-3, H-Field Probe mini 30 MHz up to 3 GHz The H-field probe RF-B 0.3-3 is designed for extreme small-scale detection of magnetic field lines entering at 90° angles into the probe tip. The coil inside the probe head is positioned at a 90° angle from the shaft. For measurements it can be positioned directly onto the measured object.

RF-U 5-2, H-Field Probe 30 MHz up to 3 GHz The RF-U 5-2 H-field probe is designed for detecting magnetical fields at broad conducting paths, cables, connectors, electronic components and their connections. The probe functions like a coupling clamp.

RF-U 2.5-2, H-Field Probe 30 MHz up to 3 GHz The RF-U 2.5-2 near-field probe is designed for the selective measurements of RF currents in conducting paths, component connectors, SMD components, and IC-pins. The probe head has a magnetically active gap with an approx. width of 0.5 mm. To use, the head should be positioned directly onto the meas…

RF-K 7-4, H-Field Probe 30 MHz up to 1 GHz The RF-K 7-4 near-field probe detects semi-circular magnetic field lines entering the probe head reversely. Such magnetic field lines occur at traces, rodlike constructional components, cable connectors, and along edges of areal constructional components. The probe functions like a coupling clamp.

RF-E 02, E-Field Probe 30 MHz up to 1.5 GHz The RF-E 02 near-field probe detects electrical fields that are decoupled from bus structures, larger components or supply surfaces. The electrode surface on the underside of the probe tip is approx. 2 cm x 5 cm. The probe functions best within distances of 1 cm - 2 cm from the component.

RF-E 03, E-Field Probe 30 MHz up to 3 GHz The electrode underneath the RF-E 03 probe head is approx. 4 x 4 mm. With it small E field sources can be localized, e.g. conducting paths, single component of Printed circuit boards. The RF-E 03 probe was developed for Langer scanner.

RF-E 04, E-Field Probe 30 MHz up to 3 GHz The electrode on the underside of RF-E 04 probe head detects electrical fields which are decoupled by clocked lines and ICs. The resolution of the probe allows for measurements with a distance from 0,5 to 10 mm above the assembly. The RF-E 04 probe was developed for Langer scanner.

RF-E 05, E-Field Probe 30 MHz up to 3 GHz The electrode at the underside of the probe head of the RF-E 05 has a width of approx. 0.5 mm. The E-fields of clocked lines, IC pins, and smaller components are precisely located. The RF-E 05 probe was developed for Langer scanner.

RF-E 09, E-Field Probe 30 MHz up to 3 GHz The electrode on the underside of RF-E 09 probe head detects electrical fields decoupled by ICs. The resolution of the probe enables measurements from distances of 0,5 to 10 mm above assemblies. The RF-E 09 probe was developed for Langer scanner.

RF-E 10, E-Field Probe 30 MHz up to 3 GHz The electrode on the lower edge of the RF-E 10 probe head has a width of approx. 0.2 mm, which can locate even the smallest E-field sources, e.g. conducting paths with a width of 0.1 mm or, single IC pins at high pin ICs.